dc.creator | Ahlbin, Jonathan Ragnar | |
dc.date.accessioned | 2020-08-22T00:21:12Z | |
dc.date.available | 2012-04-09 | |
dc.date.issued | 2012-04-09 | |
dc.identifier.uri | https://etd.library.vanderbilt.edu/etd-04012012-154436 | |
dc.identifier.uri | http://hdl.handle.net/1803/11901 | |
dc.description.abstract | As transistor density increases with each new CMOS technology node, the probability of a single ion causing a single-event transient in a circuit or inducing charge sharing among transistors increases. These transients can lead to single-event upsets that can cause a circuit or system to fail. Therefore, it is important to understand the characteristics of single-event transients at each new technology node and the resulting impacts on circuit designs.
This dissertation uses both three-dimensional mixed-mode technology-computer-aided design simulations and experimental analysis at the 65 nm, 90 nm, and 130 nm technology nodes to fully characterize the mechanisms that affect single-event transients in sub-100 nm bulk CMOS technologies. Investigations show that the design parameter of n-well contact area influences the pulse width of single-event transients by controlling the degree of parasitic bipolar junction transistor amplification in pMOS transistors. Also the prevalence of charge sharing in sub-100 nm bulk CMO technologies has led to a new single-event mechanism called pulse quenching that can shorten or eliminate single-event transients. Furthermore, pulse quenching can lead to a new type of single-event transient called a double-pulse-single-event transient. | |
dc.format.mimetype | application/pdf | |
dc.subject | pulse quenching | |
dc.subject | semiconductor reliability | |
dc.subject | radiation effects | |
dc.subject | single-event | |
dc.subject | single-event transient | |
dc.subject | digital circuit | |
dc.subject | charge sharing | |
dc.subject | CMOS reliability | |
dc.title | Characterization of the mechanisms affecting single-event transients in sub-100 nm technologies | |
dc.type | dissertation | |
dc.contributor.committeeMember | Prof. Bharat Bhuva | |
dc.contributor.committeeMember | Prof. Arthur Witulski | |
dc.contributor.committeeMember | Prof. Robert Reed | |
dc.contributor.committeeMember | Dr. Stephen Buchner | |
dc.type.material | text | |
thesis.degree.name | PHD | |
thesis.degree.level | dissertation | |
thesis.degree.discipline | Electrical Engineering | |
thesis.degree.grantor | Vanderbilt University | |
local.embargo.terms | 2012-04-09 | |
local.embargo.lift | 2012-04-09 | |
dc.contributor.committeeChair | Prof. Lloyd Massengill | |