Browsing by Author "Arthur F. Witulski"

Now showing items 1-8 of 8

    • A clock-gated, double edge-triggered flip-flop implemented with transmission gates 
      Wang, Xiaowen (2011-04-14)
      Department: Electrical Engineering
      Power is a critical issue in digital system design, especially with the emphasis on the portability of electronic devices. However, decreasing power does not necessarily lead to energy efficiency; designers need to consider ...
    • Analysis of single event vulnerabilities in a 130 nm CMOS technology 
      Amusan, Oluwole Ayodele (2006-09-01)
      Department: Electrical Engineering
      The amount of charge required to represent a logic state in CMOS digital circuits has been reduced dramatically with the scaling of supply voltage and nodal capacitances, making radiation-induced single event effects ...
    • Charge Collection Mechanisms in Silicon Devices During High-Level Carrier Generation Events 
      Hooten, Nicholas C (2014-04-03)
      Department: Electrical Engineering
      When ionizing radiation interacts with a semiconductor device, the resulting generation and collection of excess charge carriers can result in a brief transient current at the device terminals. These transient current ...
    • Impact of well structure on SE response in 90-nm bulk CMOS 
      Gaspard, Nelson Joseph III (2011-04-13)
      Department: Electrical Engineering
      As CMOS technology generations advance, the well structure has greater influence on single-event (SE) charge collection processes. Through the use of full 3D TCAD simulations, the effects of well structure are investigated ...
    • Modeling Radiation Risk Assessment and Mitigation for Spacecraft Electronics 
      Austin, Rebekah Ann (2019-11-21)
      Department: Electrical Engineering
      Space-based missions are increasingly having to design and test systems with shorter development times and small budgets and teams. These missions additionally have a higher risk tolerance, leading them to choose commercial ...
    • Single Event Mechanisms in 90 nm Triple-well CMOS Devices 
      Roy, Tania (2008-07-28)
      Department: Electrical Engineering
      Triple-well NMOSFETs collect more charge as compared to dual-well NMOSFETs. Single event charge collection mechanisms in 90 nm triple-well NMOS devices are explained and compared with those of dual-well devices. The primary ...
    • Single-Event Effect Mitigation in Pipelined Analog-to-Digital Converters 
      Olson, Brian David (2010-12-16)
      Department: Electrical Engineering
      Analog-to-digital converters (ADCs) are necessary circuits in many space, military, and medical circuit applications. Intelligence, surveillance, reconnaissance, and communication missions all require high performance ...
    • Single-Event Mechanisms in InAlSb/InAs/AlGaSb High Electron Mobility Transistors 
      Ramachandran, Vishwanath (2013-02-01)
      Department: Electrical Engineering
      Single-event mechanisms in InAlSb/InAs/AlGaSb high electron mobility transistors (HEMTs) are identified and investigated. Single-event transients are characterized using broadbeam and microbeam experiments along with 2-D ...