Browsing by Subject "CMOS"
Now showing items 1-9 of 9
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(2009-02-06)Department: Electrical EngineeringHydrogenous species play a key role in radiation induced charge buildup in metal oxide semiconductor field effect transistors (MOSFETs). The effects of water on defect formation in MOSFETs before and after radiation exposure ...
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(2011-04-13)Department: Electrical EngineeringAs CMOS technology generations advance, the well structure has greater influence on single-event (SE) charge collection processes. Through the use of full 3D TCAD simulations, the effects of well structure are investigated ...
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(2015-03-30)Department: Electrical EngineeringThe impacts of total ionizing dose (TID), temperature and RF bias on the DC and RF performance of a commercial 32 nm RF SOI CMOS technology are presented. Temperature dependence is shown to be the overwhelmingly dominant ...
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(2008-08-21)Department: Electrical EngineeringThe constant race for increasing the chip density in semiconductor integrated circuits has not only decreased the minimum device feature size but also the minimum amount of charge required to represent a HIGH node voltage. ...
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(2005-12-13)Department: Electrical EngineeringIt is now well known to the radiation effects community that single event effects caused by energetic particles, particularly single event transients, will be among the dominant reliability issues in advanced integrated ...
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(2012-11-05)Department: Electrical EngineeringSingle event latchup (SEL) is a serious reliability concern for CMOS integrated circuits (ICs), and can be especially problematic in the space radiation environment. It can occur because of a parasitic pnpn circuit inherent ...
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(2008-07-28)Department: Electrical EngineeringTriple-well NMOSFETs collect more charge as compared to dual-well NMOSFETs. Single event charge collection mechanisms in 90 nm triple-well NMOS devices are explained and compared with those of dual-well devices. The primary ...
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(2018-09-18)Department: Electrical EngineeringMOSFETs are the building blocks of modern electronics. A modern microprocessor contains billions of transistors. The microelectronics revolution can be characterized by the motto ‘smaller is better’, due to its cost ...
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(2017-03-17)Department: Electrical EngineeringAlpha, heavy-ion, neutron, and proton experimental results from 130-nm to 28-nm technology nodes are establish single-event upset cross section trends in soft and hardened flip-flop designs. Trends show that at any LET ...