Browsing by Subject "bias temperature instabilities"

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    • Reliability and irradiation effects of 4H-SiC MOS devices 
      Zhang, Xuan (Cher) (2013-04-22)
      Department: Electrical Engineering
      Bias-temperature-instabilities (BTIs) and total ionizing dose effects are investigated for 4H-SiC MOS devices. Low frequency noise measurements are employed to help understand the nature of the defects that affect the ...