dc.creator | Ramachandran, Vishwanath | |
dc.date.accessioned | 2020-08-21T20:58:54Z | |
dc.date.available | 2013-02-01 | |
dc.date.issued | 2013-02-01 | |
dc.identifier.uri | https://etd.library.vanderbilt.edu/etd-02012013-134911 | |
dc.identifier.uri | http://hdl.handle.net/1803/10512 | |
dc.description.abstract | Single-event mechanisms in InAlSb/InAs/AlGaSb high electron mobility transistors (HEMTs) are identified and investigated. Single-event transients are characterized using broadbeam and microbeam experiments along with 2-D technology computer-aided design (TCAD) modeling. The experiments show that single-event transients can be generated not only in the channel region but also across the drain-source alloy and buffer interface. The prevalence of strong single-event transient sensitivity to gate bias is demonstrated through broadbeam experiments, where the integrated charge peaks at threshold bias and drops off at both depletion and accumulation biases. A type-II band alignment in the InAlSb/InAs/AlGaSb HEMT modulating charge transport and electric field in the channel is shown to be responsible for the observed single-event transient sensitivity to gate bias. The effects of processing-induced device threshold voltage variations on the corresponding single-event response are studied through 2-D TCAD modeling. | |
dc.format.mimetype | application/pdf | |
dc.subject | High Electron Mobility Transistor | |
dc.subject | HEMT | |
dc.subject | single-event effects | |
dc.subject | radiation effects | |
dc.subject | III-V | |
dc.subject | compound semiconductor | |
dc.title | Single-Event Mechanisms in InAlSb/InAs/AlGaSb High Electron Mobility Transistors | |
dc.type | dissertation | |
dc.contributor.committeeMember | Ronald D. Schrimpf | |
dc.contributor.committeeMember | Michael L. Alles | |
dc.contributor.committeeMember | Arthur F. Witulski | |
dc.contributor.committeeMember | D. Greg Walker | |
dc.type.material | text | |
thesis.degree.name | PHD | |
thesis.degree.level | dissertation | |
thesis.degree.discipline | Electrical Engineering | |
thesis.degree.grantor | Vanderbilt University | |
local.embargo.terms | 2013-02-01 | |
local.embargo.lift | 2013-02-01 | |
dc.contributor.committeeChair | Robert A. Reed | |