Single-event-transient effects in sub-70 nm bulk and SOI FinFETs

Abstract

In this thesis, single event transient (SET) effects in sub-70 nm bulk and SOI FinFETs are investigated through topside and backside laser and heavy ion irradiations. Pulsed laser induced current transients in bulk FinFETs show distinct signatures for charge collection from drift and diffusion, demonstrating the contribution of charge generated in the substrate to the charge collection process. This result was validated through heavy ion testing on advanced bulk FinFETs with two different junction contact schemes (dumbbell and saddle). The drain region dominates the charge collection response of bulk FinFETs, with the maximum charge collected in devices with dumbbell contacts. Recorded current transients in the drain and source terminals of bulk and SOI FinFETs indicated that shunt effect plays a key role in the charge collection process of these highly scaled structure. Top-side laser and heavy ion results on bulk and SOI FinFETs demonstrate a significantly higher tolerance of SOI devices to SEEs, thanks to the buried oxide (BOX) layer that reduces their collection volume to the fins.